Jean-François Carlin

Author

École Polytechnique Fédérale de Lausanne

Also Known As

Jean-FranÇois Carlin, Jean-François Carlin

Publications

364

Citations

H-Index

Concepts

All Affiliations

École Polytechnique Fédérale de Lausanne Fraunhofer-Gesellschaft TU Wien Exalos (Switzerland)

About

Jean-François Carlin is an author at École Polytechnique Fédérale de Lausanne specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	238
2	Applied Physics	5	5	238
3	Electrical Engineering	3	3	177
4	Physics	3	3	78
5	Materials Science	1	1	17

Jean-François Carlin

Publications

363

Citations

H-Index

Page 1

	Year	Citations
Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$ Gianmauro Pozzovivo, S. Abermann, Jean-François Carlin, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics	2008	96
102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringPeak PaeEngineeringRf Semiconductor	2009	64
Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence Thomas F. K. Weatherley, Wei Liu, Vitaly Osokin, Nano Letters	2021	47
Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon Mohamed Sabry Mohamed, Angelica Simbula, Jean-François Carlin, APL Photonics Quantum PhotonicsOptical MaterialsEngineeringOptoelectronic DevicesHigh-power Lasers	2017	44
High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells Marco Rossetti, Julien Dorsaz, Raffaele Rezzonico, Applied Physics Express	2010	35
AlGaN-Free Blue III–Nitride Laser Diodes Grown on<i>c</i>-Plane GaN Substrates Julien Dorsaz, Antonino Castiglia, Gatien Cosendey, Applied Physics Express	2010	18
Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN M. A. Py, Lorenzo Lugani, Yoshitaka Taniyasu, Physical Review B Inaln LayersWide-bandgap SemiconductorEngineeringShallow DonorSemiconductors	2014	17
Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range Ian Rousseau, Irene Sánchez Arribas, Kanako Shojiki, Physical review. B./Physical review. B Optical MaterialsEngineeringRayleigh ScatteringSilicon On InsulatorOptical Properties	2017	17
Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes Wolfgang G. Scheibenzuber, Christian Hornuss, Ulrich T. Schwarz, Applied Physics Express	2011	14
Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl<sub>4</sub>and SF<sub>6</sub> Clemens Ostermaier, Gianmauro Pozzovivo, B. Basnar, Japanese Journal of Applied Physics	2010	11

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