Jean-François Carlin

Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$

Gianmauro Pozzovivo, S. Abermann, Jean-François Carlin et al. · IEEE Transactions on Electron Devices · 2008 · 96 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +13

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter et al. · IEEE Electron Device Letters · 2009 · 64 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Peak Pae +12

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Thomas F. K. Weatherley, Wei Liu, Vitaly Osokin et al. · Nano Letters · 2021 · 47 citations · Full text

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Mohamed Sabry Mohamed, Angelica Simbula, Jean-François Carlin et al. · APL Photonics · 2017 · 44 citations · Full text

Quantum Photonics, Optical Materials, Engineering +19

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Marco Rossetti, Julien Dorsaz, Raffaele Rezzonico et al. · Applied Physics Express · 2010 · 35 citations · Full text