Hansruedi Benedickter

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter et al. · IEEE Electron Device Letters · 2009 · 64 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Peak Pae +12

Laboratory Characterization of a Commercial Capacitance Sensor for Estimating Permittivity and Inferring Soil Water Content

Mike Schwank, Timothy R. Green, Christian Mätzler et al. · Vadose Zone Journal · 2006 · 53 citations

Environmental Monitoring, Engineering, Laboratory Characterization +18

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with<i>F</i>_T= 143 GHz

Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter et al. · Applied Physics Express · 2010 · 43 citations · Full text

InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption

Liang Liu, Andreas R. Alt, Hansruedi Benedickter et al. · IEEE Electron Device Letters · 2011 · 36 citations

Low-power Electronics, Room Temperature, Electrical Engineering +14

110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates

Diego Marti, Mathias Vetter, Andreas R. Alt et al. · Applied Physics Express · 2010 · 27 citations

Wide-bandgap Semiconductor, Ghz Characterization, Electrical Engineering +12