102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringPeak PaeEngineeringRf Semiconductor +10

Laboratory Characterization of a Commercial Capacitance Sensor for Estimating Permittivity and Inferring Soil Water Content

Mike Schwank, Timothy R. Green, Christian Mätzler, +2

Vadose Zone Journal

Environmental MonitoringEngineeringLaboratory CharacterizationVector Network AnalyzerHumidity Sensor +16

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with<i>F</i>_T= 143 GHz

Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, +5

Applied Physics Express

InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption

Liang Liu, Andreas R. Alt, Hansruedi Benedickter, +1

IEEE Electron Device Letters

Low-power ElectronicsRoom TemperatureElectrical EngineeringDc Power ConsumptionEngineering +12

110 GHz Characterization of Coplanar Waveguides on GaN-on-Si Substrates

Diego Marti, Mathias Vetter, Andreas R. Alt, +2

Applied Physics Express

Wide-bandgap SemiconductorGhz CharacterizationElectrical EngineeringEngineeringRf Semiconductor +10

Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation

Haifeng Sun, Andreas R. Alt, Stefano Tirelli, +4

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringIon ImplantationEngineeringRf Semiconductor +12

A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques

Valeria Teppati, Hansruedi Benedickter, Diego Marti, +7

IEEE Transactions on Microwave Theory and Techniques

Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorHigh-frequency Device +10

InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process

Ralf Flückiger, Rickard Lövblom, Olivier Ostinelli, +2

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesCutoff Frequencies +11

Low-Noise Microwave Performance of 0.1 &lt;formula formulatype="inline"&gt; &lt;tex Notation="TeX"&gt;$\mu$&lt;/tex&gt;&lt;/formula&gt;m Gate AlInN/GaN HEMTs on SiC

Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, +5

IEEE Microwave and Wireless Components Letters

Engineeringμ M GateSemiconductor DeviceMicrowave Device ModelingRf Semiconductor +14

InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

Rickard Lövblom, Ralf Flückiger, Yuping Zeng, +4

IEEE Electron Device Letters

Electrical EngineeringPresent Transistor PerformanceCutoff FrequenciesEngineeringRf Semiconductor +8