Diego Marti

150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

Diego Marti, Stefano Tirelli, Andreas R. Alt et al. · IEEE Electron Device Letters · 2012 · 112 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies

Andreas R. Alt, Diego Marti, C. R. Bolognesi · IEEE Microwave Magazine · 2013 · 100 citations

Engineering, Integrated Circuits, Transistor Modeling +21

Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz

Stefano Tirelli, Diego Marti, Haifeng Sun et al. · IEEE Electron Device Letters · 2011 · 76 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Diego Marti, Stefano Tirelli, Valeria Teppati et al. · IEEE Electron Device Letters · 2014 · 72 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

Stefano Tirelli, Diego Marti, Haifeng Sun et al. · IEEE Electron Device Letters · 2010 · 58 citations

Gan-based Hemts, Wide-bandgap Semiconductor, Electrical Engineering +10