C. R. Bolognesi

300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

M.W. Dvorak, C. R. Bolognesi, O. J. Pitts et al. · IEEE Electron Device Letters · 2001 · 170 citations

Engineering, Electrical Engineering, Materials Science +17

205-GHz (Al,In)N/GaN HEMTs

Haifeng Sun, Andreas R. Alt, H. Benedickter et al. · IEEE Electron Device Letters · 2010 · 152 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

Diego Marti, Stefano Tirelli, Andreas R. Alt et al. · IEEE Electron Device Letters · 2012 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies

Andreas R. Alt, Diego Marti, C. R. Bolognesi · IEEE Microwave Magazine · 2013 · 103 citations

Engineering, Electrical Engineering, Microelectronics +16

Interface roughness scattering in InAs/AlSb quantum wells

C. R. Bolognesi, H. Kroemer, J. H. English · Applied Physics Letters · 1992 · 93 citations

Engineering, Materials Science, Physics +17