C. R. Bolognesi

300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

M.W. Dvorak, C. R. Bolognesi, O. J. Pitts et al. · IEEE Electron Device Letters · 2001 · 170 citations

Electrical Engineering, Mocvd-grown Npn Inp/gaassb/inp, Engineering +13

205-GHz (Al,In)N/GaN HEMTs

Haifeng Sun, Andreas R. Alt, H. Benedickter et al. · IEEE Electron Device Letters · 2010 · 149 citations · Full text

Gan-based Hemts, Room Temperature, Electrical Engineering +9

150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon

Diego Marti, Stefano Tirelli, Andreas R. Alt et al. · IEEE Electron Device Letters · 2012 · 112 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies

Andreas R. Alt, Diego Marti, C. R. Bolognesi · IEEE Microwave Magazine · 2013 · 100 citations

Engineering, Integrated Circuits, Transistor Modeling +21

Interface roughness scattering in InAs/AlSb quantum wells

C. R. Bolognesi, H. Kroemer, J. H. English · Applied Physics Letters · 1992 · 93 citations

Semiconductors, Wide-bandgap Semiconductor, Semiconductor Technology +14