IEEE Electron Device Letters · 2010 · 152 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCurrent DensityGallium NitrideGallium Nitride (Gan) MaterialsGan-based High-frequency DevicesHigh-electron-mobility TransistorsShort-circuit CurrentTransconductanceWide Bandgap Semiconductor Applications
We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.
15
Barrier-Layer Scaling of InAlN/GaN HEMTs
Farid Medjdoub, M. Alomari, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2008 · 113 citations · Full text
On the definition of the cutoff frequency f<sub>T</sub>
H.K. Gummel · Proceedings of the IEEE · 1969 · 101 citations