O. J. Pitts

300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

M.W. Dvorak, C. R. Bolognesi, O. J. Pitts et al. · IEEE Electron Device Letters · 2001 · 170 citations

Electrical Engineering, Mocvd-grown Npn Inp/gaassb/inp, Engineering +13

Heavily carbon-doped GaAsSb grown on InP for HBT applications

S. P. Watkins, O. J. Pitts, Cameron Dale et al. · Journal of Crystal Growth · 2000 · 71 citations

Electrical Engineering, Engineering, Carbon-doped Gaassb Grown +3

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

David Lackner, Michael F. Steger, M. L. W. Thewalt et al. · Journal of Applied Physics · 2012 · 60 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors

C. R. Bolognesi, Martin W. Dvorak, N. Matine et al. · Japanese Journal of Applied Physics · 2002 · 56 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm

David Lackner, O. J. Pitts, Michael F. Steger et al. · Applied Physics Letters · 2009 · 54 citations

Optical Materials, Engineering, Optoelectronic Devices +16