N. Matine

Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

Jonathan Hu, Xinji Xu, J. A. H. Stotz et al. · Applied Physics Letters · 1998 · 148 citations

Optical Materials, Ingaas Layer Thickness, Engineering +19

Heavily carbon-doped GaAsSb grown on InP for HBT applications

S. P. Watkins, O. J. Pitts, Cameron Dale et al. · Journal of Crystal Growth · 2000 · 71 citations

Electrical Engineering, Engineering, Carbon-doped Gaassb Grown +3

Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors

C. R. Bolognesi, Martin W. Dvorak, N. Matine et al. · Japanese Journal of Applied Physics · 2002 · 56 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

C. R. Bolognesi, N. Matine, R.W. Dvorak et al. · IEEE Electron Device Letters · 1999 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Base Dhbts +9

Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors

Xiangang Xu, Jonathan Hu, S. P. Watkins et al. · Applied Physics Letters · 1999 · 33 citations

Electrical Engineering, High-quality Inp/gaas0.5sb0.5/inp Heterostructures, Engineering +15