S. P. Watkins

Valence-band anticrossing in mismatched III-V semiconductor alloys

Kirstin Alberi, Junqiao Wu, W. Walukiewicz et al. · Physical Review B · 2007 · 381 citations

Engineering, Materials Science, Physics +16

300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

M.W. Dvorak, C. R. Bolognesi, O. J. Pitts et al. · IEEE Electron Device Letters · 2001 · 170 citations

Engineering, Electrical Engineering, Materials Science +17

Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

Jonathan Hu, Xinji Xu, J. A. H. Stotz et al. · Applied Physics Letters · 1998 · 148 citations

Engineering, Materials Engineering, Materials Science +17

InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs

C. R. Bolognesi, Miroslav Dvořák, Pauline Yeo et al. · IEEE Transactions on Electron Devices · 2001 · 73 citations

Engineering, Electrical Engineering, Physics +17

Heavily carbon-doped GaAsSb grown on InP for HBT applications

S. P. Watkins, O. J. Pitts, Cameron Dale et al. · Journal of Crystal Growth · 2000 · 71 citations

Engineering, Electrical Engineering, Physics +14