P. Kordoš

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

J. Kuzmı́k, R. Javorka, A. Alam et al. · IEEE Transactions on Electron Devices · 2002 · 213 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Fabiana Rampazzo, P. Kordoš et al. · IEEE Transactions on Electron Devices · 2006 · 182 citations · Full text

Electrical Engineering, Engineering, Gan Cap Layer +12

Porous silicon as a substrate material for potentiometric biosensors

M. Thust, M. J. Schöning, S. Frohnhoff et al. · Measurement Science and Technology · 1996 · 133 citations

Chemical Engineering, Physical Adsorption, Engineering +13

High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

P. Kordoš, G. Heidelberger, J. Bernát et al. · Applied Physics Letters · 2005 · 107 citations · Full text

Oxide Heterostructures, Wide-bandgap Semiconductor, Electrical Engineering +10

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

R. Stoklas, D. Gregušová, J. Novák et al. · Applied Physics Letters · 2008 · 105 citations

Semiconductors, Algan/gan/si Field-effect Transistors, Electrical Engineering +15