J. Bernát

High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

P. Kordoš, G. Heidelberger, J. Bernát et al. · Applied Physics Letters · 2005 · 107 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

M. Marso, G. Heidelberger, K. M. Indlekofer et al. · IEEE Transactions on Electron Devices · 2006 · 86 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

J. Bernát, P. Javorka, Andrew J. Fox et al. · Solid-State Electronics · 2003 · 63 citations

Engineering, Materials Engineering, Materials Science +14

Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation

J. Bernát, P. Javorka, M. Marso et al. · Applied Physics Letters · 2003 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

P. Kordoš, J. Bernát, M. Marso et al. · Applied Physics Letters · 2005 · 27 citations

Engineering, Electrical Engineering, Materials Science +17