K. M. Indlekofer

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

M. Marso, G. Heidelberger, K. M. Indlekofer et al. · IEEE Transactions on Electron Devices · 2006 · 86 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Interference and interactions in open quantum dots

R. Akis, D. K. Ferry, Alessandro P. S. de Moura et al. · Reports on Progress in Physics · 2003 · 59 citations

Quantum Science, Open Electron Cavities, Quantum Optic +15

A vertical resonant tunneling transistor for application in digital logic circuits

J. Stock, J. Malindretos, K. M. Indlekofer et al. · IEEE Transactions on Electron Devices · 2001 · 56 citations

Electrical Engineering, Digital Logic Circuits, Vlsi Design +14

Resonant Tunneling in Nanocolumns Improved by Quantum Collimation

Jakob Wensorra, K. M. Indlekofer, Mihail Ion Lepsa et al. · Nano Letters · 2005 · 31 citations

Materials Science, Quantum Science, Quantum Collimation +14

Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors

K. M. Indlekofer, Joachim Knoch, Joerg Appenzeller · Physical Review B · 2005 · 24 citations · Full text