Concepedia

G. Heidelberger

GH

6

Publications

264

Citations

6

H-Index

2005

Active since

Affiliations

Slovak Academy of Sciences(Current)

Forschungszentrum Jülich

Institute of Electrical Engineering of the Slovak Academy of Sciences

Slovak University of Technology in Bratislava

G. Heidelberger is an author at Slovak Academy of Sciences specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsSemiconductorsNanoelectronicsPower SemiconductorsOxide HeterostructuresPhysicsHydrogen

Publications per year

2005–2007

6

Publications

6

High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

P. Kordoš, G. Heidelberger, J. Bernát et al. · Applied Physics Letters · 2005 · 107 citations · Full text

Oxide Heterostructures, Wide-bandgap Semiconductor, Electrical Engineering +10

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

M. Marso, G. Heidelberger, K. M. Indlekofer et al. · IEEE Transactions on Electron Devices · 2006 · 86 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures

M. Marso, Andrew J. Fox, G. Heidelberger et al. · IEEE Electron Device Letters · 2006 · 32 citations

Moshfet Layer Structures, Electrical Engineering, Engineering +13

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

G. Heidelberger, J. Bernát, Andrew J. Fox et al. · physica status solidi (a) · 2006 · 14 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

The growth mechanism of GaN with different H2/N2 carrier gas ratios

Yong Suk Cho, H. Hardtdegen, N. Kaluza et al. · Journal of Crystal Growth · 2007 · 13 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

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