M. Marso

Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires

Raffaella Calarco, M. Marso, T. Richter et al. · Nano Letters · 2005 · 558 citations

Semiconductors, Electrical Engineering, Photoluminescence +13

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

J. Kuzmı́k, R. Javorka, A. Alam et al. · IEEE Transactions on Electron Devices · 2002 · 213 citations · Full text

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

P. Kordoš, G. Heidelberger, J. Bernát et al. · Applied Physics Letters · 2005 · 107 citations · Full text

Oxide Heterostructures, Wide-bandgap Semiconductor, Electrical Engineering +10

GaN-nanowhiskers: MBE-growth conditions and optical properties

R. Meijers, T. Richter, Raffaella Calarco et al. · Journal of Crystal Growth · 2006 · 92 citations · Full text

Semiconductors, Materials Science, Engineering +4

Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs

M. Marso, G. Heidelberger, K. M. Indlekofer et al. · IEEE Transactions on Electron Devices · 2006 · 86 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14