R. Stoklas - Concepedia

Author

R. Stoklas

Slovak Academy of Sciences ORCID

Also Known As

R Stoklas, R. Stoklas, Roman Stoklas, S.J. Roman

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Slovak Academy of Sciences Institute of Electrical Engineering of the Slovak Academy of Sciences Slovak University of Technology in Bratislava Hokkaido University Institute of Physics

About

R. Stoklas is an author at Slovak Academy of Sciences specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	28	917
2	Applied Physics	17	28	917
3	Electrical Engineering	15	23	825
4	Materials Engineering	4	4	119
5	Natural Sciences	1	1	16

R. Stoklas

Publications

927

Citations

H-Index

Page 1

	Year	Citations
Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis R. Stoklas, D. Gregušová, J. Novák, Applied Physics Letters SemiconductorsAlgan/gan/si Field-effect TransistorsElectrical EngineeringElectronic DevicesEngineering	2008	105
Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor P. Kordoš, D. Gregušová, R. Stoklas, Applied Physics Letters Oxide HeterostructuresZero-bias MobilitiesElectrical EngineeringMoshfet DevicesEngineering	2007	88
Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis P. Kordoš, R. Stoklas, D. Gregušová, Applied Physics Letters SemiconductorsOxide HeterostructuresElectrical EngineeringElectronic DevicesEngineering	2009	80
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al<sub>2</sub>O<sub>3</sub> gate oxide D. Gregušová, R. Stoklas, K. Čičo, Semiconductor Science and Technology Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2007	68
Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition D. Gregušová, R. Stoklas, Ch. Mizue, Journal of Applied Physics Aluminium NitrideWide-bandgap SemiconductorEngineeringTrap State DensitySemiconductors	2010	57
Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness P. Kordoš, D. Gregušová, R. Stoklas, Solid-State Electronics Oxide HeterostructuresWide-bandgap SemiconductorElectrical EngineeringEngineeringTransport Properties	2008	53
On the origin of interface states at oxide/III-nitride heterojunction interfaces M. Matys, B. Adamowicz, Alina Domanowska, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsStructural Disorder	2016	50
Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements P. Kordoš, R. Stoklas, D. Gregušová, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesFast Trap States	2010	46
Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics K. Čičo, K. Hušeková, M. Ťapajna, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena SemiconductorsGate DielectricsElectrical EngineeringElectronic DevicesEngineering	2011	35
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties M. Ťapajna, R. Stoklas, D. Gregušová, Applied Surface Science Materials ScienceOxide HeterostructuresElectrical EngineeringEngineering‘ Surface Donors	2017	33

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