R. Stoklas

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

R. Stoklas, D. Gregušová, J. Novák et al. · Applied Physics Letters · 2008 · 105 citations

Semiconductors, Algan/gan/si Field-effect Transistors, Electrical Engineering +15

Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

P. Kordoš, D. Gregušová, R. Stoklas et al. · Applied Physics Letters · 2007 · 88 citations

Oxide Heterostructures, Zero-bias Mobilities, Electrical Engineering +10

Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

P. Kordoš, R. Stoklas, D. Gregušová et al. · Applied Physics Letters · 2009 · 80 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +12

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al₂O₃ gate oxide

D. Gregušová, R. Stoklas, K. Čičo et al. · Semiconductor Science and Technology · 2007 · 68 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +11

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

D. Gregušová, R. Stoklas, Ch. Mizue et al. · Journal of Applied Physics · 2010 · 57 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16