Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness - Concepedia

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Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

53

Citations

31

References

2008

Year

P. Kordoš, D. Gregušová, R. Stoklas, Š. Gaži, J. Novák

Solid-State Electronics

Oxide HeterostructuresWide-bandgap SemiconductorElectrical EngineeringEngineeringTransport PropertiesApplied PhysicsAluminum Gallium NitrideDifferent ThicknessGan Power Device

References

	Year	Citations

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