Š. Gaži

MgB2 superconducting thin films on Si and Al2O3 substrates

A. Plecenı́k, L. Satrapinský, P. Kúš et al. · Physica C Superconductivity · 2001 · 53 citations · Full text

Materials Science, Superconducting Material, High-tc Superconductivity +5

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

P. Kordoš, D. Gregušová, R. Stoklas et al. · Solid-State Electronics · 2008 · 53 citations

Oxide Heterostructures, Wide-bandgap Semiconductor, Electrical Engineering +6

Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

P. Kordoš, R. Stoklas, D. Gregušová et al. · Applied Physics Letters · 2010 · 46 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Growth and recrystallization of CeO2 thin films deposited on R-plane sapphire by off-axis RF sputtering

M. Španková, I. Vávra, Š. Gaži et al. · Journal of Crystal Growth · 2000 · 40 citations

Materials Engineering, Materials Science, Engineering +10

Measurement of astrophysical S-factors and electron screening potentials for reaction in ZrD2, TiD2 and TaD0.5 targets in the ultralow energy region using plasma accelerator

V. M. Bystritsky, V. M. Bystritskiǐ, G. N. Dudkin et al. · Nuclear Physics A · 2012 · 28 citations

Plasma Accelerator, Engineering, Nuclear Physics +10