B. Holländer

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

Nils von den Driesch, Daniela Stange, S. Wirths et al. · Chemistry of Materials · 2015 · 147 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures

H. Trinkaus, B. Holländer, St. Rongen et al. · Applied Physics Letters · 2000 · 113 citations · Full text

Materials Science, Complete Strain Relaxation, Efficient Strain Relaxation +10

Test of Vegard's law in thin epitaxial SiGe layers

E. Kasper, Alexander Schuh, G. Bauer et al. · Journal of Crystal Growth · 1995 · 91 citations

Physics, Applied Physics, Semiconductor Device Fabrication +2

Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Erwan Rauwel, C. Dubourdieu, B. Holländer et al. · Applied Physics Letters · 2006 · 86 citations

Y Addition, Hfo2 Thin Films, Engineering +18

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

B. Reuters, H. Hahn, Alexander Pooth et al. · Journal of Physics D Applied Physics · 2014 · 83 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11