E. Kasper

A one-dimensional SiGe superlattice grown by UHV epitaxy

E. Kasper, H.-J. Herzog, H. Kibbel · Applied Physics A · 1975 · 251 citations

Engineering, Physics, One-dimensional Sige Superlattice +5

Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

M. Jutzi, Manfred Berroth, Gregory R. Wohl et al. · IEEE Photonics Technology Letters · 2005 · 233 citations

Photonics, Electrical Engineering, Thin Strain-relaxed Buffers +14

Photoluminescence in short-period Si/Ge strained-layer superlattices

R. Zachai, K. Eberl, G. Abstreiter et al. · Physical Review Letters · 1990 · 197 citations

Ii-vi Semiconductor, Electrical Engineering, Photoluminescence +11

The n-channel SiGe/Si modulation-doped field-effect transistor

Heinrich Daembkes, H.-J. Herzog, H. Jorke et al. · IEEE Transactions on Electron Devices · 1986 · 194 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

GeSn p-i-n detectors integrated on Si with up to 4% Sn

Michael Oehme, M. Schmid, Mathias Kaschel et al. · Applied Physics Letters · 2012 · 182 citations

Optical Materials, Engineering, Complete Layer Structure +21