H.-J. Herzog

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

F. Schäffler, D. Többen, H.-J. Herzog et al. · Semiconductor Science and Technology · 1992 · 276 citations

Electrical Engineering, Engineering, Sige Buffer Layer +10

A one-dimensional SiGe superlattice grown by UHV epitaxy

E. Kasper, H.-J. Herzog, H. Kibbel · Applied Physics A · 1975 · 251 citations

Engineering, Physics, One-dimensional Sige Superlattice +5

The n-channel SiGe/Si modulation-doped field-effect transistor

Heinrich Daembkes, H.-J. Herzog, H. Jorke et al. · IEEE Transactions on Electron Devices · 1986 · 194 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates

E. Kasper, H.-J. Herzog · Thin Solid Films · 1977 · 163 citations

Materials Science, Si0.92ge0.08 Films, Engineering +9

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

Giovanni Isella, Daniel Chrastina, B. Rössner et al. · Solid-State Electronics · 2004 · 148 citations

Engineering, Applied Physics, Semiconductor Device Fabrication +5