H.-J. Herzog - Concepedia

Author

H.-J. Herzog

Also Known As

H -J Herzog, H. -J. Herzog, H. Herzog, H. J. Herzog, H. ‐J. Herzog, H.- J Herzog, H.-J Herzog, H.-J. HERZOG, H.-J. Herzog, H.J Herzog

114

Publications

3.8K

Citations

H-Index

Concepts

All Affiliations

Daimler (Germany)Universität Ulm Forschungszentrum Jülich Technical University of Munich ETH Zurich

About

H.-J. Herzog is an author at Daimler (Germany) specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	28	47	2.6K
2	Engineering	27	50	2.7K
3	Electrical Engineering	14	20	932
4	Materials Engineering	5	5	215
5	Computer Engineering	2	2	32

H.-J. Herzog

Publications

2.9K

Citations

H-Index

Page 1

	Year	Citations
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer F. Schäffler, D. Többen, H.-J. Herzog, Semiconductor Science and Technology Electrical EngineeringEngineeringSige Buffer LayerPhysicsNanoelectronics	1992	276
A one-dimensional SiGe superlattice grown by UHV epitaxy E. Kasper, H.-J. Herzog, H. Kibbel Applied Physics A EngineeringPhysicsOne-dimensional Sige SuperlatticeApplied PhysicsCondensed Matter Physics	1975	251
The n-channel SiGe/Si modulation-doped field-effect transistor Heinrich Daembkes, H.-J. Herzog, H. Jorke, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1986	194
Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates E. Kasper, H.-J. Herzog Thin Solid Films Materials ScienceSi0.92ge0.08 FilmsEngineeringDislocation InteractionApplied Physics	1977	163
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices Giovanni Isella, Daniel Chrastina, B. Rössner, Solid-State Electronics EngineeringApplied PhysicsSemiconductor Device FabricationGe HeterostructuresSilicon On Insulator	2004	148
Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures H. Trinkaus, B. Holländer, St. Rongen, Applied Physics Letters Materials ScienceComplete Strain RelaxationEfficient Strain RelaxationEngineeringDislocation Interaction	2000	113
Secondary implantation of Sb into Si molecular beam epitaxy layers H. Jorke, H.-J. Herzog, H. Kibbel Applied Physics Letters Materials ScienceSemiconductorsSpontaneous IncorporationIon ImplantationEngineering	1985	111
Kinetics of ordered growth of Si on Si(100) at low temperatures H. Jorke, H.-J. Herzog, H. Kibbel Physical review. B, Condensed matter EngineeringDimer StringsRandom NucleationSilicon On InsulatorOrdered Growth	1989	95
X‐Ray Investigation of Boron‐ and Germanium‐Doped Silicon Epitaxial Layers H.-J. Herzog, L. Csepregi, H. Seidel Journal of The Electrochemical Society SemiconductorsMaterials ScienceBoron NitrideEngineeringCrystalline Defects	1984	94
Strained layer superlattices E. Kasper, H.-J. Herzog, H. Jorke, Superlattices and Microstructures High-tc SuperconductivityEngineeringPhysicsApplied PhysicsCondensed Matter Physics	1987	80

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