H. Jorke

The n-channel SiGe/Si modulation-doped field-effect transistor

Heinrich Daembkes, H.-J. Herzog, H. Jorke et al. · IEEE Transactions on Electron Devices · 1986 · 194 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Surface segregation of Sb on Si(100) during molecular beam epitaxy growth

H. Jorke · Surface Science · 1988 · 157 citations

Materials Science, Engineering, Surface Science +7

Symmetrically strained Si/Ge superlattices on Si substrates

E. Kasper, H. Kibbel, H. Jorke et al. · Physical review. B, Condensed matter · 1988 · 147 citations

Materials Science, Strained Superlattices, Engineering +10

Secondary implantation of Sb into Si molecular beam epitaxy layers

H. Jorke, H.-J. Herzog, H. Kibbel · Applied Physics Letters · 1985 · 111 citations

Materials Science, Semiconductors, Spontaneous Incorporation +14

Kinetics of ordered growth of Si on Si(100) at low temperatures

H. Jorke, H.-J. Herzog, H. Kibbel · Physical review. B, Condensed matter · 1989 · 95 citations

Engineering, Dimer Strings, Random Nucleation +17