The n-channel SiGe/Si modulation-doped field-effect transistor

Heinrich Daembkes, H.-J. Herzog, H. Jorke, +2

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +10

Surface segregation of Sb on Si(100) during molecular beam epitaxy growth

H. Jorke

Surface Science

Materials ScienceEngineeringSurface ScienceApplied PhysicsSemiconductor Material +5

Symmetrically strained Si/Ge superlattices on Si substrates

E. Kasper, H. Kibbel, H. Jorke, +3

Physical review. B, Condensed matter

Materials ScienceStrained SuperlatticesEngineeringSuperlattice PeriodicityPhysics +8

Secondary implantation of Sb into Si molecular beam epitaxy layers

H. Jorke, H.-J. Herzog, H. Kibbel

Applied Physics Letters

Materials ScienceSemiconductorsSpontaneous IncorporationIon ImplantationEngineering +12

Kinetics of ordered growth of Si on Si(100) at low temperatures

H. Jorke, H.-J. Herzog, H. Kibbel

Physical review. B, Condensed matter

EngineeringDimer StringsRandom NucleationSilicon On InsulatorOrdered Growth +15

Strained layer superlattices

E. Kasper, H.-J. Herzog, H. Jorke, +1

Superlattices and Microstructures

High-tc SuperconductivityEngineeringPhysicsApplied PhysicsCondensed Matter Physics +1

Boron delta doping in Si and Si0.8Ge0.2 layers

H. Jorke, H. Kibbel

Applied Physics Letters

Materials ScienceSemiconductorsEpitaxial GrowthEngineeringB Delta +12

Doping by Secondary Implantation

H. Jorke, H. Kibbel

Journal of The Electrochemical Society

Materials EngineeringSemiconductorsMaterials ScienceElectronic DevicesEngineering +13

Forward-bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures

H. Jorke, H. Kibbel, K.M. Strohm, +1

Applied Physics Letters

Forward-bias Current-voltage CharacteristicsEngineeringOptoelectronic DevicesIntegrated CircuitsForward-bias Characteristics +16

Properties of Si layers grown by molecular beam epitaxy at very low temperatures

H. Jorke, H. Kibbel, F. Schäffler, +3

Applied Physics Letters

Materials ScienceEpitaxial GrowthLow TemperaturesElectronic MaterialsEtch Pit Densities +10