Heinrich Daembkes

The n-channel SiGe/Si modulation-doped field-effect transistor

Heinrich Daembkes, H.-J. Herzog, H. Jorke et al. · IEEE Transactions on Electron Devices · 1986 · 194 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Improved short-channel GaAs MESFET's by use of higher doping concentration

Heinrich Daembkes, W. Brockerhoff, K. Heime et al. · IEEE Transactions on Electron Devices · 1984 · 37 citations

Semiconductor Technology, Electrical Engineering, Submicrometer Gates +11

Multiple quantum well AlGaAs/GaAs field-effect transistor structures for power applications

Heinrich Daembkes, G. Weimann · Applied Physics Letters · 1988 · 22 citations

Wide-bandgap Semiconductor, Electrical Engineering, Room-temperature Properties +8

Determination of the electron saturation velocity in pseudomorphic Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As MODFETs at 300 and 100 K

Juergen Dickmann, C. Heedt, Heinrich Daembkes · IEEE Transactions on Electron Devices · 1989 · 19 citations

Semiconductor Technology, Aluminium Nitride, Electrical Engineering +12

(Al/sub 0.7/Ga/sub 0.3/)/sub 0.5/In/sub 0.5/P/In/sub 0.15/Ga/sub 0.85/As/Ga As heterostructure field effect transistors with very thin highly p-doped surface layer

Jürgen Dickmann, Michael C. Berg, A. Geyer et al. · IEEE Transactions on Electron Devices · 1995 · 15 citations

Semiconductors, Maximum Extrinsic Transconductance, Electrical Engineering +13