K. Heime - Concepedia

Author

K. Heime

RWTH Aachen University

Also Known As

Heime K., K Heime, K. HEIME, K. Heime, Klaus Heime

232

Publications

Citations

H-Index

Concepts

All Affiliations

RWTH Aachen University Aixtron (Germany)Deutsche Bundespost University of Duisburg-Essen Max Planck Institute for Solid State Research

About

K. Heime is an author at RWTH Aachen University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	59	1.3K
2	Applied Physics	20	57	1.3K
3	Chemistry	4	4	76
4	Education	1	1	24
5	Biostatistics	1	1	11

K. Heime

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers L. Eckey, U. von Gfug, J. Holst, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineering	1998	98
LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires Francisco Eduardo Gontijo Guimarães, B. Elsner, R. Westphalen, Journal of Crystal Growth Optical MaterialsEngineeringPhysicsOptical PropertiesCompound Semiconductor	1992	90
Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors E. Fred Schubert, K. Ploog, H. D�mbkes, Applied Physics A Wide-bandgap SemiconductorElectrical EngineeringEngineeringField Effect TransistorsApplied Physics	1984	74
Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements L. Loreck, H. Dämbkes, K. Heime, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineeringNoise ComponentsLow-frequency NoiseDeep Levels	1984	70
Very low resistance NiAuGeNi contacts to n-GaAs K. Heime, U. König, E. Kohn, Solid-State Electronics	1974	69
Diffusion in III-V semiconductors from spin-on-film sources N. Arnold, R. Schmitt, K. Heime Journal of Physics D Applied Physics SemiconductorsSpintronicsMaterials ScienceElectrical EngineeringEngineering	1984	59
Compensation effects in Mg-doped GaN epilayers L. Eckey, U. von Gfug, J. Holst, Journal of Crystal Growth Electrical EngineeringEngineeringOptical PropertiesCompensation EffectsApplied Physics	1998	39
Improved short-channel GaAs MESFET's by use of higher doping concentration Heinrich Daembkes, W. Brockerhoff, K. Heime, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringSubmicrometer GatesEngineeringShort-channel Gaas Mesfet	1984	37
An improved model to explain ohmic contact resistance of f-GaAs and other semiconductors WU DING-FEN, Dening Wang, K. Heime Solid-State Electronics SemiconductorsImproved ModelElectrical EngineeringEngineeringOther Semiconductors	1986	32
Zinc diffusion in InP using diethylzinc and phosphine Jacob J. Wisser, M. Glade, Harald Schmidt, Journal of Applied Physics Materials ScienceEngineeringDiffusion ResistancePhysicochemical AnalysisZinc Diffusion	1992	28

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