Statistics
Publications
11
Citations
417
H-Index
11
Active since
1997
J. Holst is an author at Technische Universität Berlin specializing in applied physics, engineering, and optoelectronics.
Publications per year
1997–2003
11
11
On the nature of the 3.41 eV luminescence in hexagonal GaN
Stefan Fischer, G. Steude, D.M. Hofmann et al. · Journal of Crystal Growth · 1998 · 79 citations
Mechanisms of optical gain in cubic gallium nitrite
J. Holst, L. Eckey, A. Hoffmann et al. · Applied Physics Letters · 1998 · 47 citations · Full text
Wide-bandgap Semiconductor, Photonics, Optical Materials +12
Compensation effects in Mg-doped GaN epilayers
L. Eckey, U. von Gfug, J. Holst et al. · Journal of Crystal Growth · 1998 · 39 citations
The origin of optical gain in cubic InGaN grown by molecular beam epitaxy
J. Holst, A. Hoffmann, D. Rudloff et al. · Applied Physics Letters · 2000 · 36 citations
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