L. Eckey

Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots

R. Heitz, Marius Grundmann, N. N. Ledentsov et al. · Applied Physics Letters · 1996 · 243 citations

Ii-vi Semiconductor, Quantum Science, Multiphonon Relaxation +13

Properties of the yellow luminescence in undoped GaN epitaxial layers

D.M. Hofmann, D. Kovalev, G. Steude et al. · Physical review. B, Condensed matter · 1995 · 231 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +12

Exciton fine structure in undoped GaN epitaxial films

D. Volm, K. Oettinger, T. Streibl et al. · Physical review. B, Condensed matter · 1996 · 156 citations

Wide-bandgap Semiconductor, Layer Thickness, Photoluminescence +12

Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy

H. Siegle, L. Eckey, A. Hoffmann et al. · Solid State Communications · 1995 · 149 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +7

InAs/GaAs quantum dots radiative recombination from zero‐dimensional states

Marius Grundmann, N. N. Ledentsov, R. Heitz et al. · physica status solidi (b) · 1995 · 133 citations

Semiconductors, Materials Science, Photoluminescence +15