W. Brockerhoff - Concepedia

Author

W. Brockerhoff

University of Duisburg-Essen

Also Known As

Brockerhoff, W., W Brockerhoff, W. Brockerhoff, Wolfgang Brockerhoff

Publications

343

Citations

H-Index

Concepts

All Affiliations

University of Duisburg-Essen Deutsche Bundespost

About

W. Brockerhoff is an author at University of Duisburg-Essen specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	250
2	Applied Physics	9	9	250
3	Electrical Engineering	9	9	250
4	Physics	6	6	184
5	Computer Engineering	1	1	22

W. Brockerhoff

Publications

267

Citations

H-Index

Page 1

	Year	Citations
Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET R. Reuter, M. Agethen, U. Auer, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorPhysics	1997	60
Improved short-channel GaAs MESFET's by use of higher doping concentration Heinrich Daembkes, W. Brockerhoff, K. Heime, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringSubmicrometer GatesEngineeringShort-channel Gaas Mesfet	1984	37
On-wafer microwave measurement setup for investigations on HEMTs and high-T/sub c/ superconductors at cryogenic temperatures down to 20 K H. Meschede, R. Reuter, J.N. Albers, IEEE Transactions on Microwave Theory and Techniques Superconducting MaterialCryogenic TemperaturesEngineeringMicrowave TransmissionRf Semiconductor	1992	34
High-Frequency Measurements on InAs Nanowire Field-Effect Transistors Using Coplanar Waveguide Contacts K. Blekker, Benjamin Munstermann, A. Matiss, IEEE Transactions on Nanotechnology Device ModelingNanowire FetElectrical EngineeringElectronic DevicesEngineering	2009	26
Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer C. Heedt, Fred Buchali, W. Prost, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1994	26
Sub-Nanosecond Pulse Generation using Resonant Tunneling Diodes for Impulse Radio A. Matiss, A. Poloczek, Andreas Stöhr, PhotonicsElectrical EngineeringPulse GenerationSingle MobileEngineering	2007	22
Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature H. Dämbkes, W. Brockerhoff, K. Heime, Electronics Letters	1984	17
RF measurements and characterization of heterostructure field-effect transistors at low temperatures W. Brockerhoff, H. Meschede, W. Prost, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringLow TemperaturesEngineeringSubmicron Superlattice HfetsRf Semiconductor	1989	16
Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFET R. Reuter, M. Agethen, U. Auer, EngineeringRadio FrequencyElectronic PropertiesSemiconductor DeviceElectromagnetic Compatibility	2002	16
InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices W. Daumann, P. Ellrodt, W. Brockerhoff, IEEE Electron Device Letters Electrical EngineeringSemiconductor DeviceEngineeringRf SemiconductorElectronic Engineering	1996	13

Page 1