W. Brockerhoff

Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

R. Reuter, M. Agethen, U. Auer et al. · IEEE Transactions on Microwave Theory and Techniques · 1997 · 60 citations

Electrical Engineering, Semiconductor Device, Engineering +15

Improved short-channel GaAs MESFET's by use of higher doping concentration

Heinrich Daembkes, W. Brockerhoff, K. Heime et al. · IEEE Transactions on Electron Devices · 1984 · 37 citations

Semiconductor Technology, Electrical Engineering, Submicrometer Gates +11

On-wafer microwave measurement setup for investigations on HEMTs and high-T/sub c/ superconductors at cryogenic temperatures down to 20 K

H. Meschede, R. Reuter, J.N. Albers et al. · IEEE Transactions on Microwave Theory and Techniques · 1992 · 34 citations

Superconducting Material, Cryogenic Temperatures, Engineering +20

High-Frequency Measurements on InAs Nanowire Field-Effect Transistors Using Coplanar Waveguide Contacts

K. Blekker, Benjamin Munstermann, A. Matiss et al. · IEEE Transactions on Nanotechnology · 2009 · 26 citations

Device Modeling, Nanowire Fet, Electrical Engineering +15

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

C. Heedt, Fred Buchali, W. Prost et al. · IEEE Transactions on Electron Devices · 1994 · 26 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13