C. Heedt

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

C. Heedt, Fred Buchali, W. Prost et al. · IEEE Transactions on Electron Devices · 1994 · 26 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Determination of the electron saturation velocity in pseudomorphic Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As MODFETs at 300 and 100 K

Juergen Dickmann, C. Heedt, Heinrich Daembkes · IEEE Transactions on Electron Devices · 1989 · 19 citations

Semiconductor Technology, Aluminium Nitride, Electrical Engineering +12

Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET

Fred Buchali, C. Heedt, W. Prost et al. · Microelectronic Engineering · 1992 · 17 citations

Electrical Engineering, Engineering, Nanoelectronics +4

Room-temperature deposition of SiNx using ECR-PECVD for semiconductor microelectronics in lift-off technique

A. Wiersch, C. Heedt, S. Schneiders et al. · Journal of Non-Crystalline Solids · 1995 · 17 citations

Materials Science, Electrical Engineering, Engineering +5

The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field-effect transistors

U. Auer, R. Reuter, P. Ellrodt et al. · Microwave and Optical Technology Letters · 1996 · 13 citations

Semiconductor Technology, Electrical Engineering, Engineering +8