Kinetics of ordered growth of Si on Si(100) at low temperatures

Abstract

The temperature of the crystalline-disorder transition observed in temperature ramp silicon films grown on (100) Si by molecular-beam epitaxy is found to depend strongly on the deposition rate. This observation can be modeled if growth by random nucleation of dimer strings, as suggested by Tsao et al., is assumed to be a thermally activated process which becomes frozen upon further deposition.