Mathias Kaschel

GeSn p-i-n detectors integrated on Si with up to 4% Sn

Michael Oehme, M. Schmid, Mathias Kaschel et al. · Applied Physics Letters · 2012 · 182 citations

Optical Materials, Engineering, Complete Layer Structure +21

Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

J.H. Werner, Michael Oehme, M. Schmid et al. · Applied Physics Letters · 2011 · 179 citations

Optical Materials, Engineering, Band Gap Reduction +18

Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz

S. Klinger, Manfred Berroth, Mathias Kaschel et al. · IEEE Photonics Technology Letters · 2009 · 119 citations

Photonics, Electrical Engineering, Image Sensor +11

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz

Michael Oehme, Konrad Kostecki, Kaiheng Ye et al. · Optics Express · 2014 · 105 citations · Full text

Short Wavelength Optic, Optical Materials, Engineering +20

Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

Michael Oehme, J.H. Werner, Martin Gollhofer et al. · IEEE Photonics Technology Letters · 2011 · 95 citations

Materials Science, Electrical Engineering, Solid-state Lighting +13