Martin Gollhofer

GeSn p-i-n detectors integrated on Si with up to 4% Sn

Michael Oehme, M. Schmid, Mathias Kaschel et al. · Applied Physics Letters · 2012 · 182 citations

Optical Materials, Engineering, Complete Layer Structure +21

Electrically pumped lasing from Ge Fabry-Perot resonators on Si

Roman Koerner, Michael Oehme, Martin Gollhofer et al. · Optics Express · 2015 · 154 citations · Full text

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz

Michael Oehme, Konrad Kostecki, Kaiheng Ye et al. · Optics Express · 2014 · 105 citations · Full text

Short Wavelength Optic, Optical Materials, Engineering +20

Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

Michael Oehme, J.H. Werner, Martin Gollhofer et al. · IEEE Photonics Technology Letters · 2011 · 95 citations

Materials Science, Electrical Engineering, Solid-state Lighting +13

GeSn Heterojunction LEDs on Si Substrates

Michael Oehme, Konrad Kostecki, T. Arguirov et al. · IEEE Photonics Technology Letters · 2014 · 88 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +14