GeSn p-i-n detectors integrated on Si with up to 4% Sn

Michael Oehme, M. Schmid, Mathias Kaschel, +4

Applied Physics Letters

Optical MaterialsEngineeringComplete Layer StructureOptoelectronic DevicesSilicon On Insulator +19

Electrically pumped lasing from Ge Fabry-Perot resonators on Si

Roman Koerner, Michael Oehme, Martin Gollhofer, +6

Optics Express

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz

Michael Oehme, Konrad Kostecki, Kaiheng Ye, +9

Optics Express

Short Wavelength OpticOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices +18

Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

Michael Oehme, J.H. Werner, Martin Gollhofer, +4

IEEE Photonics Technology Letters

Materials ScienceElectrical EngineeringSolid-state LightingEngineeringPhotoluminescence +11

GeSn Heterojunction LEDs on Si Substrates

Michael Oehme, Konrad Kostecki, T. Arguirov, +9

IEEE Photonics Technology Letters

Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineeringPhotoluminescence +12

GeSn/Ge multiquantum well photodetectors on Si substrates

Michael Oehme, Daniel Widmann, Konrad Kostecki, +8

Optics Letters

Ge BarrierPhotonicsElectrical EngineeringGesn/ge MultiquantumEngineering +10

Direct bandgap narrowing in Ge LED’s on Si substrates

Michael Oehme, Martin Gollhofer, Daniel Widmann, +4

Optics Express

SemiconductorsSemiconductor TechnologyElectrical EngineeringOptical MaterialsElectronic Devices +13

Electroluminescence of GeSn/Ge MQW LEDs on Si substrate

B. Schwartz, Michael Oehme, Konrad Kostecki, +9

Optics Letters

Electrical EngineeringSolid-state LightingEngineeringPhotoluminescencePhysics +11

Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range

M. Schmid, Mathias Kaschel, Martin Gollhofer, +4

Thin Solid Films

Semiconductor TechnologyFranz–keldysh EffectElectrical EngineeringEngineeringGermanium-on-silicon P–i–n Diodes +6

Franz-Keldysh effect in GeSn pin photodetectors

Michael Oehme, Konrad Kostecki, M. Schmid, +8

Applied Physics Letters

Transient GratingEngineeringDirect Band GapPhoton EnergyIi-vi Semiconductor +14