Concepedia

Publication | Open Access

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

DOIFull Paper Access

42

Citations

17

References

2013

Year

B. Reuters, Ada Wille, N. Ketteniss, H. Hahn, B. Holländer, M. Heuken, H. Kalisch, Andrei Vescan
Journal of Electronic Materials

References

YearCitations

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