Concepedia

Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers

B. Reuters, Ada Wille, N. Ketteniss, H. Hahn, B. Holländer, M. Heuken, H. Kalisch, Andrei Vescan

Journal of Electronic Materials · 2013 · 42 citations · 17 references

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17

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O. Ambacher, Jacek A. Majewski, C. R. Miskys et al. · Journal of Physics Condensed Matter · 2002 · 1K citations

, , +17

Effects of macroscopic polarization in III-V nitride multiple quantum wells

Vincenzo Fiorentini, Fabio Bernardini, Fabio Della Sala et al. · Physical review. B, Condensed matter · 1999 · 526 citations · Full text

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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

R. Butté, E. Feltin, M. Gonschorek et al. · Journal of Physics D Applied Physics · 2007 · 328 citations · Full text

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High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

M. Gonschorek, J.‐F. Carlin, E. Feltin et al. · Applied Physics Letters · 2006 · 318 citations · Full text

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Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Ronghua Wang, P. Saunier, Xiu Xing et al. · IEEE Electron Device Letters · 2010 · 158 citations

, , +15