Julien Poulain

10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100nm GaN/Si process

Ahmed Gasmi, M. El Kaamouchi, Julien Poulain et al. · 2017 · 67 citations

Engineering, Electrical Engineering, Microelectronics +16

6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process

Rémy Leblanc, Noelia Santos Ibeas, Ahmed Gasmi et al. · 2016 · 49 citations

Engineering, Electrical Engineering, Microelectronics +16

Direct Extraction of InP/GaAsSb/InP DHBT Equivalent-Circuit Elements From <formula formulatype="inline"><tex Notation="TeX">$S$</tex></formula>-Parameters Measured at Cut-Off and Normal Bias Conditions

Tom K. Johansen, Rémy Leblanc, Julien Poulain et al. · IEEE Transactions on Microwave Theory and Techniques · 2015 · 30 citations

Engineering, Electrical Engineering, Microelectronics +16

Comparative noise investigation of high-performance GaAs and GaN millimeter-wave monolithic technologies

Walter Ciccognani, Sergio Colangeli, Antonio Serino et al. · 2019 · 27 citations

Engineering, Electrical Engineering, Microelectronics +16

Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

Sergio Colangeli, Walter Ciccognani, Patrick E. Longhi et al. · Electronics · 2021 · 13 citations · Full text

Engineering, Electrical Engineering, Materials Science +17