Mathieu Leroux

Barrier-width dependence of group-III nitrides quantum-well transition energies

Mathieu Leroux, N. Grandjean, J. Massies et al. · Physical review. B, Condensed matter · 1999 · 188 citations · Full text

Engineering, Materials Science, Physics +17

Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

Pierre Lefèbvre, J. Allègre, Bernard Gil et al. · Physical review. B, Condensed matter · 1999 · 163 citations · Full text

Engineering, Materials Science, Physics +17

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Stéphane Brochen, J. Brault, Sébastien Chenot et al. · Applied Physics Letters · 2013 · 128 citations

Engineering, Materials Engineering, Materials Science +16

Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy

E. Feltin, S. Dalmasso, P. de Mierry et al. · Japanese Journal of Applied Physics · 2001 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Tomasz J. Ochalski, Bernard Gil, Pierre Lefèbvre et al. · Applied Physics Letters · 1999 · 52 citations · Full text

Engineering, Materials Engineering, Materials Science +13