P. de Mierry

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, B. Beaumont, M. Laügt et al. · Applied Physics Letters · 2001 · 270 citations

Materials Science, Semiconductors, Electrical Engineering +13

Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces

Qinghua Song, Arthur Baroni, Rajath Sawant et al. · Nature Communications · 2020 · 239 citations · Full text

Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

P. Vennéguès, M. Benaı̈ssa, B. Beaumont et al. · Applied Physics Letters · 2000 · 122 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +12

Hydrogen diffusion and passivation processes in<i>p</i>- and<i>n</i>-type crystalline silicon

R. Rizk, P. de Mierry, D. Ballutaud et al. · Physical review. B, Condensed matter · 1991 · 116 citations

Engineering, Deuterium Diffusion, Chemistry +17

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Jean-Marc Bethoux, P. Vennéguès, F. Natali et al. · Journal of Applied Physics · 2003 · 102 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +12