Jean-Marc Bethoux

Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors

A. Le Louarn, F. Kapche, Jean-Marc Bethoux et al. · Applied Physics Letters · 2007 · 110 citations

Electrical Engineering, Engineering, Field-effect Transistors +13

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Jean-Marc Bethoux, P. Vennéguès, F. Natali et al. · Journal of Applied Physics · 2003 · 102 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +12

An 8-GHz f/sub t/ carbon nanotube field-effect transistor for gigahertz range applications

Jean-Marc Bethoux, H. Happy, G. Dambrine et al. · IEEE Electron Device Letters · 2006 · 58 citations

Engineering, Carbon Nanotechnology, Access Pads +16

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

Philippe Vennéguès, Z. Bougrioua, Jean-Marc Bethoux et al. · Journal of Applied Physics · 2004 · 36 citations

Materials Science, Aluminium Nitride, Relaxation Process +12

Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements

Jean-Marc Bethoux, H. Happy, Alexandre Siligaris et al. · IEEE Transactions on Nanotechnology · 2006 · 26 citations

Device Modeling, Electrical Engineering, Intrinsic Ac Elements +15