Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

Abstract

The relaxation mechanisms in metal-organic vapor phase epitaxy grown (Al,Ga)N∕GaN heterostructures are studied. The first stage of the relaxation process is a two-dimensional–three-dimensional growth transition with the formation of mesalike islands separated by V-shaped trenches. The tensile stress relief is obtained by an elastic relaxation of the islands edges. In the case of AlN∕GaN, the apexes of the V trenches reach the heterointerface and misfit dislocations are nucleated at the islands coalescence region. These dislocations are a type and glide in the basal plane to promote further relaxation. For (Al,Ga)N∕GaN with an Al concentration below 70%, the apexes of the V trenches do not reach the heterointerface, prohibiting the nucleation of misfit dislocations. For thicker layers, the next stage of the relaxation is the cracking of the films.