M. Azize - Concepedia

Author

M. Azize

Centre National de la Recherche Scientifique

Also Known As

Azize, M., Azize, Mohamed, M Azize, M. Azize, Mohamed Azize

Publications

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Massachusetts Institute of Technology Université de Montpellier Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Universidad Politécnica de Madrid

About

M. Azize is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	982
2	Applied Physics	15	21	982
3	Electrical Engineering	14	19	924
4	Materials Science	10	10	323
5	Materials Engineering	4	4	132

M. Azize

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators Su Ryon Shin, Sung Mi Jung, Momen Zalabany, ACS Nano	2013	929
GaN-on-Si Vertical Schottky and p-n Diodes Yuhao Zhang, Min Sun, Daniel Piedra, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2014	179
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Yuhao Zhang, Min Sun, Hiu Yung Wong, IEEE Transactions on Electron Devices Electrical EngineeringGan-on-si Vertical DiodesEngineeringOff-state Leakage CurrentApplied Physics	2015	159
Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ Dong Seup Lee, Han Wang, Allen Hsu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineering\Rm TGan Hemts	2013	114
Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures M. Azize, Tomás Palacios Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	2010	81
Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE Z. Bougrioua, M. Azize, P. Lorenzini, physica status solidi (a) Materials EngineeringSemiconductorsElectrical EngineeringDislocation DensitiesEngineering	2005	65
Top-down fabrication of AlGaN/GaN nanoribbons M. Azize, Tomás Palacios Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2011	55
High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons M. Azize, Allen Hsu, Omair I. Saadat, IEEE Electron Device Letters SemiconductorsInaln/gan NanoribbonsElectrical EngineeringElectronic DevicesEngineering	2011	37
Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures Philippe Vennéguès, Z. Bougrioua, Jean-Marc Bethoux, Journal of Applied Physics Materials ScienceAluminium NitrideRelaxation ProcessEngineeringMetal-organic Vapor Phase	2004	36
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Y. Cordier, M. Azize, N. Baron, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2007	35

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