A. Le Louarn

Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors

A. Le Louarn, F. Kapche, Jean-Marc Bethoux et al. · Applied Physics Letters · 2007 · 110 citations

Engineering, Electrical Engineering, Materials Science +15

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

A. Le Louarn, S. Vézian, F. Sèmond et al. · Journal of Crystal Growth · 2009 · 81 citations

Engineering, Materials Engineering, Materials Science +14

Strong effect of interband transitions in the picosecond ultrasonics response of metallic thin films

A. Devos, A. Le Louarn · Physical review. B, Condensed matter · 2003 · 46 citations · Full text

Natural Sciences, Materials Science, Physics +17

Generation of terahertz acoustic waves in semiconductor quantum dots using femtosecond laser pulses

Pierre‐Adrien Mante, A. Devos, A. Le Louarn · Physical Review B · 2010 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source

S. Vézian, A. Le Louarn, J. Massies · Journal of Crystal Growth · 2007 · 20 citations

Engineering, Materials Engineering, Materials Science +16