Stéphane Brochen

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Stéphane Brochen, J. Brault, Sébastien Chenot et al. · Applied Physics Letters · 2013 · 125 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

H. Rotella, Yann Mazel, Stéphane Brochen et al. · Journal of Physics D Applied Physics · 2017 · 69 citations

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Guillaume Perillat-Merceroz, Patrice Gergaud, Pascal Marotel et al. · Journal of Applied Physics · 2011 · 53 citations · Full text

Role of deep and shallow donor levels on <i>n</i>-type conductivity of hydrothermal ZnO

Stéphane Brochen, Claude Louis Granier, G. Feuillet et al. · Applied Physics Letters · 2012 · 22 citations

Materials Science, Chemical Engineering, Engineering +11

Arsenic complexes optical signatures in As-doped HgCdTe

F. Gemain, I. C. Robin, Stéphane Brochen et al. · Applied Physics Letters · 2013 · 19 citations

X-ray Crystallography, Ii-vi Semiconductor, Transition Metal Chalcogenides +15