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Arsenic complexes optical signatures in As-doped HgCdTe
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Citations
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References
2013
Year
X-ray CrystallographyIi-vi SemiconductorTransition Metal ChalcogenidesOptical MaterialsEngineeringPhotoluminescencePhysicsNatural SciencesSpectroscopyApplied PhysicsHall MeasurementsChemistryCrystallographyArsenic ComplexesAs-doped HgcdteMolecular Beam EpitaxyOptoelectronicsSpectroscopic Property
In this paper, the optical signatures of arsenic complexes in As-doped HgCdTe samples grown by molecular beam epitaxy are clearly identified using comparison between photoluminescence spectra, Extended X-Ray Absorption Fine Structure, and Hall measurements. The ionization energies of the different complexes are measured both by photoluminescence and Hall measurements.
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