Mohamed Al Khalfioui

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, Samuel Matta, Thien H. Ngo et al. · Journal of Applied Physics · 2019 · 25 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AlN

Jay R. Chan, S. Vézian, Joe Trodahl et al. · Crystal Growth & Design · 2016 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +17

Artificial Optoelectronic Synapse with Nanolayered GaN/AlN Periodic Structure for Neuromorphic Computing

Xiayang Hua, Jiyuan Zheng, Xu Han et al. · ACS Applied Nano Materials · 2023 · 23 citations

Engineering, Electrical Engineering, Materials Science +16

Anemometer based on Seebeck effect

Mohamed Al Khalfioui, A. Michez, A. Boyer et al. · Sensors and Actuators A Physical · 2003 · 21 citations

Engineering, Electrical Engineering, Physics +9

Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor

A. Al Bayaz, Mohamed Al Khalfioui, A. Foucaran et al. · Journal of Crystal Growth · 2003 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +17