Growth parameters effect on the thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor

Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide

Sonali Mishra, S. Satpathy, O. Jepsen · Journal of Physics Condensed Matter · 1997 · 541 citations

Natural Sciences, Materials Science, Physics +17

Growth of Bi2Te3 and Sb2Te3 thin films by MOCVD

Abdellah Boulouz, F. Pascal‐Delannoy, A. Foucaran et al. · Materials Science and Engineering B · 1999 · 118 citations

Natural Sciences, Materials Engineering, Materials Science +12

New Semiconducting Compounds

E. Mooser, W. B. Pearson · Physical Review · 1956 · 85 citations

A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAs

Christian T. Plass, H. Heinecke, Oliver Kayser et al. · Journal of Crystal Growth · 1988 · 75 citations

Engineering, Materials Engineering, Materials Science +11

Preparation and characterization of Bi2Se3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

Babasaheb R. Sankapal, Rajaram S. Mane, C.D. Lokhande · Materials Chemistry and Physics · 2000 · 66 citations

Natural Sciences, Materials Engineering, Materials Science +12