Statistics
Publications
43
Citations
1.6K
H-Index
22
Active since
1984
Affiliations
H. Heinecke is an author at Siemens (Germany) specializing in engineering, applied physics, and electrical engineering.
Publications per year
1984–1998
43
43
A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
N. Pütz, H. Heinecke, M. Heyen et al. · Journal of Crystal Growth · 1986 · 178 citations
Selective growth of GaAs in the MOMBE and MOCVD systems
H. Heinecke, A. Brauers, F. Grafahrend et al. · Journal of Crystal Growth · 1986 · 130 citations
Intentional ρ-type doping by carbon in metalorganic MBE of GaAs
M. Weyers, N. Pütz, H. Heinecke et al. · Journal of Electronic Materials · 1986 · 81 citations
Kinetics of GaAs growth by low pressure MO-CVD
H. Heinecke, E. Veuhoff, N. Pütz et al. · Journal of Electronic Materials · 1984 · 81 citations
1–5 of 43