M. Weyers - Concepedia

Author

M. Weyers

Ferdinand-Braun-Institut ORCID

Also Known As

M Weyers, M. WEYERS, M. Weyers, Marcus Weyers, Markus Weyers, Markus Weyers Markus Weyers, Weyers, M., Weyers, Markus

629

Publications

13K

Citations

H-Index

149

Concepts

All Affiliations

Ferdinand-Braun-Institut Technische Universität Berlin Kirchhoff (Germany)Humboldt-Universität zu Berlin Leibniz Institute for Crystal Growth

About

M. Weyers is an author at Ferdinand-Braun-Institut specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	51	270	10.5K
2	Natural Sciences	10	10	244
3	Education	1	1	13
4	Health Sciences	1	1	175
5	Medicine	1	1	175

M. Weyers

300

Publications

11.9K

Citations

H-Index

Page 1

	Year	Citations
Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers M. Weyers, Michio Sato, Hiroaki Ando Japanese Journal of Applied Physics Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringPhotoluminescence	1992	767
Advances in group III-nitride-based deep UV light-emitting diode technology Michael Kneissl, Tim Kolbe, C.L. Chua, Semiconductor Science and Technology White OledUltraviolet LightElectrical EngineeringDeep Uv EmittersEngineering	2010	668
The 2020 UV emitter roadmap Hiroshi Amano, Ramón Collazo, Carlo De Santi, Journal of Physics D Applied Physics	2020	489
Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection M. Wurtele, Tim Kolbe, M. Lipsz, Water Research White OledWater DisinfectionChemical EngineeringGan-based Ultraviolet-c LightEngineering	2010	437
Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3 M. Weyers, Michio Sato Applied Physics Letters Materials ScienceMaterials EngineeringSemiconductorsEngineeringPhysics	1993	205
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire Norman Susilo, Sylvia Hagedorn, Dominik Jaeger, Applied Physics Letters Aln/sapphire TemplatesAluminium NitrideOptical MaterialsEngineeringOptical Properties	2018	198
A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs N. Pütz, H. Heinecke, M. Heyen, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsGallium OxideComparative Study	1986	178
Recognition and imitation of pantomimed motor acts after unilateral parietal and premotor lesions: a perspective on apraxia Ulrike Halsband, J. Eric Schmitt, M. Weyers, Neuropsychologia Pantomimed Motor ActsKinesiologyPremotor LesionsMotor ControlSurgery	2001	175
Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes Tim Kolbe, A. Knauer, C.L. Chua, Applied Physics Letters Optical MaterialsEngineeringOptical Polarization CharacteristicsOptical PropertiesLight-emitting Diodes	2010	160
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells Tim Wernicke, Lukas Schade, Carsten Netzel, Semiconductor Science and Technology	2012	141

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