Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

Abstract

We present the first report on the optical properties of dilute GaAS 1- x N x alloys (0< x <0.015). The layers have been grown by plasma-assisted metalorganic chemical vapor deposition (MOCVD). The grown layers show a systematic red shift of the band-edge luminescence with increasing N content. The assignement of the photoluminescence to band-edge transitions and not to isolated N-N pair emission is verified by the characteristics of the optical absorption.