Selective growth of GaAs in the MOMBE and MOCVD systems

Molecular Layer Epitaxy

Jun‐ichi Nishizawa, Hitoshi Abe, Toru Kurabayashi · Journal of The Electrochemical Society · 1985 · 313 citations

Thin Film Physics, Optical Materials, Engineering +16

A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs

N. Pütz, H. Heinecke, M. Heyen et al. · Journal of Crystal Growth · 1986 · 178 citations

Electrical Engineering, Engineering, Applied Physics +3

Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source

Eisuke Tokumitsu, Yoshimitsu Kudou, Makoto Konagai et al. · Journal of Applied Physics · 1984 · 150 citations

Semiconductors, Materials Science, Sio2 Film +11

Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow

B. Perrin · Journal de Physique Lettres · 1982 · 149 citations · Full text

Unsteady Flow, Environmental Fluid Dynamic, Engineering +15

GaAs growth in metal–organic MBE

N. Pütz, E. Veuhoff, H. Heinecke et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 124 citations

Semiconductors, Materials Science, Gaas Growth +11