Kinetics of GaAs growth by low pressure MO-CVD

Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence

D.H. Reep, S. K. Ghandhi · Journal of The Electrochemical Society · 1983 · 294 citations

Engineering, Materials Engineering, Materials Science +17

On the Reaction Mechanism of GaAs MOCVD

Jun‐ichi Nishizawa, T. Kurabayashi · Journal of The Electrochemical Society · 1983 · 202 citations

Natural Sciences, Materials Engineering, Materials Science +12

A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy

Maarten Leys, Hendrik Veenvliet · Journal of Crystal Growth · 1981 · 170 citations

Engineering, Electrical Engineering, Materials Science +16

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of The Electrochemical Society · 1979 · 105 citations

Engineering, Materials Engineering, Materials Science +17

An examination of the product-catalyzed reaction of trimethylgallium with arsine

D. J. Schlyer, M. A. Ring · Journal of Organometallic Chemistry · 1976 · 88 citations

Natural Sciences, Biochemistry, Chemistry +7