T. Kurabayashi

On the Reaction Mechanism of GaAs MOCVD

Jun‐ichi Nishizawa, T. Kurabayashi · Journal of The Electrochemical Society · 1983 · 202 citations

Natural Sciences, Materials Engineering, Materials Science +12

Mechanism of surface reaction in GaAs layer growth

Jun‐ichi Nishizawa, T. Kurabayashi, Hitoshi Abe et al. · Surface Science · 1987 · 96 citations

Natural Sciences, Materials Engineering, Materials Science +14

Differentiating benign and malignant salivary gland tumours: diagnostic criteria and the accuracy of dynamic contrast-enhanced MRI with high temporal resolution

Phong D Lam, Ami Kuribayashi, Akiko Imaizumi et al. · British Journal of Radiology · 2015 · 71 citations · Full text

Medicine, Oncology, Radiology +17

Gallium arsenide thin films by low-temperature photochemical processes

Jun‐ichi Nishizawa, T. Kurabayashi, Hideki Abe et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1987 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +17

706‐GHz GaAs CW fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy

J. Nishizawa, Piotr Płotka, T. Kurabayashi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 34 citations

Engineering, Electrical Engineering, Materials Science +17