Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 34 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicrowave EngineeringSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave MaterialsMicrowave OscillatorsMicrowave Semiconductor DevicesSemiconductor HeterostructuresGaas OscillatorsHigh-frequency ElectronicsMicrowave CavitiesMicrowave DevicesMolecular Beam EpitaxyPower OutputRadio-frequency DevicesResonant Cavities
Abstract GaAs TUNNET diodes with 75‐nm thick undoped transit‐time layer and 14‐nm thick n + electric‐field‐inducing layer, fabricated with molecular layer epitaxy, were oscillating in fundamental‐mode, metal, rectangular WR‐1.0 (0.254 × 0.127 mm) resonant cavities at 706 GHz. The continuous wave output power was ‐67 dBm, at the bias current of 600 mA. The frequency range of continuous wave fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy extends from 60 GHz (+13 dBm) to 706 GHz. Modulation experiments of lower frequency, 86‐GHz and 163‐GHz, TUNNETTs have shown that TUNNETTs are suitable for broadband communication and other systems at the modulation rate exceeding 2 Gbps. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations
Engineering, Electrical Engineering, Electronic Materials +16