H. Makabe

706‐GHz GaAs CW fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy

J. Nishizawa, Piotr Płotka, T. Kurabayashi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 34 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

J. Nishizawa, T. Kurabayashi, H. Makabe · IEEE Transactions on Electron Devices · 2003 · 34 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

GaAs TUNNETT diodes oscillating at 430-655 GHz in CW fundamental mode

Jun-ichi Nishizawa, H. Makabe, T. Kurabayashi · IEEE Microwave and Wireless Components Letters · 2005 · 23 citations

Electrical Engineering, Gaas Tunnet, Cw Fundamental Mode +12

290–393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode

Jun‐ichi Nishizawa, Piotr Płotka, H. Makabe et al. · Electronics Letters · 2005 · 12 citations

Electrical Engineering, Gaas Tunnett Diode, Engineering +10

Development of TUNNETT Diode as Terahertz Device and Its Applications

Jun‐ichi Nishizawa, Toru Kurabayashi, Piotr Płotka et al. · 2006 · 10 citations

Tunnett Diode, Terahertz Devices, Electrical Engineering +10