J. Nishizawa - Concepedia

Author

J. Nishizawa

Also Known As

J Nishizawa, J. NISHIZAWA, J. Nishizawa, J.-I. Nishizawa, Jun NISHIZAWA, Jun Nishizawa, Jun-Ichi Nishizawa, Jun-ichi Nishizawa

Publications

888

Citations

H-Index

Concepts

All Affiliations

Tohoku University

About

J. Nishizawa is an author at Tohoku University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	19	465
2	Applied Physics	13	15	383
3	Medicine	1	1	11
4	Biochemistry	1	1	11
5	Civil Engineering	1	1	37

J. Nishizawa

Publications

486

Citations

H-Index

Page 1

	Year	Citations
Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski Method K. Tomizawa, K. Sassa, Y. Shimanuki, Journal of The Electrochemical Society EngineeringCrystal Growth TechnologyUndoped CrystalsSemiconductorsMolecular Beam Epitaxy	1984	47
GaAs TUNNETT Diodes J. Nishizawa, K. Motoya, Yasuo Okuno IEEE Transactions on Microwave Theory and Techniques SemiconductorsElectrical EngineeringFundamental OscillationEngineeringRf Semiconductor	1978	42
Fundamental study on snaking in strip rolling. Takashi Ishikawa, Yasuhisa Tozawa, J. Nishizawa Transactions of the Iron and Steel Institute of Japan Three-dimensional AnalysisEngineeringMechanicsDeformation ModelingMechanical Engineering	1988	37
706‐GHz GaAs CW fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy J. Nishizawa, Piotr Płotka, T. Kurabayashi, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Semiconductor TechnologyElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2008	34
240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy J. Nishizawa, T. Kurabayashi, H. Makabe IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	2003	34
Ballistic and tunneling GaAs static induction transistors: nano-devices for THz electronics J. Nishizawa, T. Kurabayashi IEEE Transactions on Electron Devices Thz PhotonicsElectrical EngineeringThz ElectronicsEngineeringRf Semiconductor	2002	30
Terahertz dichroism of MBBA liquid crystal on rubbed substrate J. Nishizawa, Tetsuya Yamada, Tetsuo Sasaki, Applied Surface Science Materials ScienceThz PhotonicsEngineeringApplied PhysicsCondensed Matter Physics	2005	29
Ideal static induction transistor implemented with molecular layer epitaxy Piotr Płotka, Toru Kurabayashi, Yutaka Oyama, Applied Surface Science Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringApplied Physics	1994	27
Simple structured PMOSFET fabricated using molecular layer doping J. Nishizawa, Kenji Aoki, T. Akamine IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringMolecular LayerMld Process	1990	24
Efficiency of GaAlAs heterostructure red light-emitting diodes J. Nishizawa, Masayoshi Koike, Cao Jin Journal of Applied Physics EngineeringElectroluminescence EfficiencyOptoelectronic DevicesCarrier LifetimeLuminescence Property	1983	23

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