J. Nishizawa

Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski Method

K. Tomizawa, K. Sassa, Y. Shimanuki et al. · Journal of The Electrochemical Society · 1984 · 47 citations · Full text

Engineering, Crystal Growth Technology, Undoped Crystals +17

GaAs TUNNETT Diodes

J. Nishizawa, K. Motoya, Yasuo Okuno · IEEE Transactions on Microwave Theory and Techniques · 1978 · 42 citations

Semiconductors, Electrical Engineering, Fundamental Oscillation +13

Fundamental study on snaking in strip rolling.

Takashi Ishikawa, Yasuhisa Tozawa, J. Nishizawa · Transactions of the Iron and Steel Institute of Japan · 1988 · 37 citations · Full text

Three-dimensional Analysis, Engineering, Mechanics +10

706‐GHz GaAs CW fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy

J. Nishizawa, Piotr Płotka, T. Kurabayashi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 34 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

J. Nishizawa, T. Kurabayashi, H. Makabe · IEEE Transactions on Electron Devices · 2003 · 34 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13